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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 150 V | ||
| Gate-Source Breakdown Voltage : | 30 V | Continuous Drain Current : | 2.6 A | ||
| Resistance Drain-Source RDS (on) : | 185 mOhms | Configuration : | Single Dual Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-223 | Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| VDS | Drain- Source Voltage | 2.6 | V |
| ID @ TA= 25 | Continuous Drain Current, VGS @ -4.5V | 2.1 | A |
| ID @ TA= 100 | Continuous Drain Current, VGS @ -4.5V | 21 | A |
| IDM | Pulsed Drain Current | 2.8 | A |
| PD @ TA = 25 | Power Dissipation | 0.02 | W |
| Linear Derating Factor | ±30 | W/ | |
| EAS | Single Pulse Avalanche Energy | 6.3 | mJ |
| VGS | Gate-to-Source Voltage | -55 to + 150 | V |
| TJ, TSTG | Junction and Storage Temperature Range | 300 (1.6mm from case |
| Technical/Catalog Information | IRFL4315PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 2.6A |
| Rds On (Max) @ Id, Vgs | 185 mOhm @ 1.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 420pF @ 25V |
| Power - Max | 2.8W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 19nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFL4315PBF IRFL4315PBF |