Purchase IRFM1310ST, In-stock IRFM1310ST From SeekIC.
- Table of contents:
IRFM1310ST
-
Suppliers
DataSheet
General Description
IRFM1310ST Maximum Ratings
| VGS | Gate Source Voltage | ±20V |
| ID | Continuous Drain Current (VGS = 10V , Tcase = 25°C) | 34A |
| ID | Continuous Drain Current (VGS = 10V , Tcase = 100°C) | 21A |
| IDM | Pulsed Drain Current 1 | 136A |
| PD | Power Dissipation @ Tcase = 25°C | 150W |
| Linear Derating Factor | 1.2W/°C | |
| TJ , Tstg | Operating and Storage Temperature Range | 55 to 150°C |
| RJC | Thermal Resistance Junction to Case | 0.83°C/W |
| RJCS | Thermal Resistance Case to Sink(Typical) | 0.21°C/W |
| RJCA | Thermal Resistance Junction-to-Ambient | 48°C/W |
IRFM1310ST Features
• REPETITIVE AVALANCHE RATING
• ISOLATED AND HERMETICALLY SEALED
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
• ISOLATED AND HERMETICALLY SEALED
• EASE OF PARALLELING
• SIMPLE DRIVE REQUIREMENTS
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
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