IRFN214BTA_FP001 Selling Leads, Price trend , Fairchild Semiconductor, IRFN214BTA_FP001 DataSheet download, circuit diagram from SeekIC.com

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IRFN214BTA_FP001: MOSFET 250V N-CHAN

IRFN214BTA_FP001 Data Sheet

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Part Number:: IRFN214BTA_FP001
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	250 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	0.6 A
Resistance Drain-Source RDS (on) :	2000 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-92-3	Packaging :	Ammo

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 0.6 A
Packaging : Ammo
Resistance Drain-Source RDS (on) : 2000 mOhms
Package / Case : TO-92-3

Parameters:

Technical/Catalog Information	IRFN214BTA_FP001
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	600mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 300mA, 10V
Input Capacitance (Ciss) @ Vds	275pF @ 25V
Power - Max	1.8W
Packaging	Tape & Box (TB)
Gate Charge (Qg) @ Vgs	10.5nC @ 10V
Package / Case	TO-92
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFN214BTA_FP001 IRFN214BTA_FP001

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IRFN214BTA_FP001

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