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Part Number: IRFP054N

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low&n...


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IRFP054N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP054N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 81 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 57
IDM Pulsed Drain Current 290
PD @TC = 25°C Power Dissipation 170 W
  Linear Derating Factor 1.1 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 360 mJ
IAR Avalanche Current 43 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRFP054N Features

Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

IRFP054N datasheet

IRFP054N
PDF/DataSheet Download

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Related Part Number

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