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MFG:IR  Package Cooled:TO-247  D/C:05+06+  

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Part Number: IRFP054VPbF

 

MFG: IR

Package Cooled: TO-247

D/C: 05+06+

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing...


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IRFP054VPbF General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP054VPbF Maximum Ratings

 
Parameter
Maximum
Units
ID @ TA = 25 Continuous Drain Current, VGS @ 10V
93
A
ID @ TA = 70 Continuous Drain Current, VGS @ 10V
66
IDM Pulsed Drain Current
360
PD @TA = 25 Power Dissipation
180
W
  Linear Derating Factor
1.2
mW/
VGS Linear Derating Factor
±20
V
IAR Avalanche Current
90
A
EAR Repetitive Avalanche Energy
18
mJ
dv/dt Peak Diode Recovery dv/dt
4.7
V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range
-55 to +175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

IRFP054VPbF Features

` Advanced Process Technology
` Ultra Low On-Resistance
` Dynamic dv/dt Rating
` 175 Operating Temperature
` Fast Switching
` Fully Avalanche Rated
` Optimized for SMPS Applications
` Lead-Free

IRFP054VPbF datasheet

IRF034
PDF/DataSheet Download

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