MFG:TO-247AC Package Cooled:7850 D/C:IR
MFG: TO-247AC
Package Cooled: 7850
D/C: IR
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
| Symbol | Parameter | Max. | Units |
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 160 | A |
| ID @ VGS = 12V, TC =100°C | Continuous Drain Current | 110 | A |
| IDM | Pulsed Drain Current | 95 | A |
| PD @ TV = 25 | Power Dissipation | 640 | W |
| Linear Derating Factor |
310 |
W/ | |
| VGS | Gate-to-Source Voltage | 2.0 | V |
| EAS | Single Pulse Avalanche Energy | ±20 | mJ |
| IAR | Avalanche Current | 530 | A |
| EAR | Repetitive Avalanche Energy | 1060 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | See Fig.12a, 12b, 15, 16 | V/ns |
| TJ, TSTG | Operating Junction Storage Temperature Range |
-55 to 150 |
IRF034
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