IRFP26N60L

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247AC
Resistance Drain-Source RDS (on) : 0.25 Ohms
Continuous Drain Current : 26 A


Description

The IRFPS26N60L is a kind of power MOSFET, VDSS: 600V, RDS(on): 210m, Trr:170ns, ID: 26A. If you want to know more imformation about this IC, please go to our website.

The features of IRFPS26N60L can be summarized as (1)zero voltage switching SMPS; (2)telecom and senrer power supplies; (3)uninterruptible power supplies; (4)motor control applications; (5)superfast body diode eliminates the need for external diodes in ZVS applications; (6)lower gate charge results in simpler drive requirements; (7)enhanced dv/dt capabilities offer improved ruggedness; (8)higher gate voltage threshold offers improved noise immunity.

The absolute maximum ratings of IRFPS26N60L are (1)ID @ TC = 25°C continuous drain current, VGS @ 10: 26A; (2)ID @ TC = 100°C continuous drain current, VGS as 10: 17A; (3)pulsed drain current IDM: 100A; (4)PD @ TC = 25°C power dissipation: 470W; (5)VGS gate-to-source voltage: ±30V; (6)dv/dt peak diode recovery dv/dt: 30V/ns; (7)TJ, TSTG junction and storage temperature range: -55 to +150°C; (8)soldering temperature, for 10 seconds 300 (1 .6mm from case).