Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 75 V
Gate-Source Breakdown Voltage
: 20 V
Package / Case
: TO-247AC
Continuous Drain Current
: 170 A
Features: ` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-FreeSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25 |
Continuous Drain Current VGS @ 10V(Silicon Limited) |
170 |
A |
|
ID @ TC =100 |
Continuous Drain Current VGS @ 10V |
120 |
|
ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V (Package Limited) |
90 |
|
IDM |
Pulsed Drain Current |
680 |
|
PD @ TC = 25 |
Max. Power Dissipation |
310 |
W |
|
|
Linear Derating actor |
2.0 |
W/ |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
520 |
mJ |
|
EAS (Tested ) |
Single Pulse Avalanche Energy Tested Value |
690 |
mJ |
|
IAR |
Avalanche Current |
See Fig.12a, 12b, 15, 16 |
A |
|
EAR |
Repetitive Avalanche Energy |
|
mJ |
|
TJ |
Operating Junction |
-55 to 175 |
|
|
TSTG |
Storage Temperature Range |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
|
Mounting Torque, 6-32 or M3 screw |
10lb`in (1.1N`m) |
|
DescriptionSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design of the IRFP2907ZPbF are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Parameters: | Technical/Catalog Information | IRFP2907ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 90A |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 90A, 10V |
| Input Capacitance (Ciss) @ Vds | 7500pF @ 25V |
| Power - Max | 310W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V |
| Package / Case | TO-247-3 (TO-247AC, Straight Leads) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFP2907ZPBF
IRFP2907ZPBF
|
IRFP2907ZPBF Data Sheet
