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IRFP350A

MOSFET 400V N-Channel A-FET

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SeekIC No. : 00162728 Detail

IRFP350A: MOSFET 400V N-Channel A-FET

IRFP350A Data Sheet

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Part Number:
IRFP350A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3P Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.3 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 400 V


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current: 10mA (Max.) @ VDS = 400V
` Low RDS(ON): 0.254 (Typ.)


Specifications

Symbol Parameter Rating Unit
VDSS

 Drain-Source Voltage

 400

 V
ID

IDM		 Continuous Drain Current (Tc=25°C)
Continuous Drain Current (Tc=100°C)

Drain Current-Pulsed (1)		 17
10.8

68		 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (2) 1156 mJ
IAR Avalanche Current (1) 17 A
EAR Repetitive Avalanche Energy (1) 20.2 mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
PD Total Power Dissipation (TC=25)

Linear Derating Factor		 202

1.61		 W

W/
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300



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