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Part Number: IRFP4410ZPbF

 

MFG: IR

 

 

 

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IRFP4410ZPbF Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25 Continuous Drain Current, VGS @ 10V (Silicon Limited) 97 A
ID @ TC = 100 Continuous Drain Current, VGS @ 10V (Silicon Limited) 69
IDM Pulsed Drain Current 390
PD @TC = 25 Maximum Power Dissipation 230 W
  Linear Derating Factor 1.5 W/
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery 16 V/ns
TJ,TSTG Operating Junction and Storage Temperature Range -55 to + 175  
  Soldering Temperature, for 10 seconds
(1.6mm from case)		 300
  Mounting torque, 6-32 or M3 screw 10lbin(1.1Nm)  

IRFP4410ZPbF Features

· Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
· Fully Characterized Capacitance and Avalanche SOA
· Enhanced body diode dV/dt and dI/dt Capability
· Lead-Free

IRFP4410ZPbF Typical Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits

IRFP4410ZPbF datasheet

IRF034
PDF/DataSheet Download

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