IRFP9240

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 12 A
Package / Case : TO-247AC
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

• 12A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance




Pinout






Specifications

Drain to Source Breakdown Voltage (Note 1) . . .. . . . . .V -200V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. . . . . VDGR -200 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . .. . . ID -12 A
TC = 125oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID -7.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . .. . . IDM -48 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . .. . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . .. . .. . .PD150 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . 1.2 W/
Single Pulse Avalanche Energy Rating (Note 4). . . . ... . .EAS 790 mJ
Operating and Storage Temperature . . . . . . . . . . . TJ, TSTG -55to150
Maximum Temperature for Solderin
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .. . . . TL 300
Package Body for 10s, See Techbrief 334 . . . . . .. . . . . Tpkg 260

Description

This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17522.

The IRFP9240 is designed as one kind of P-Channel enhancement mode silicon gate power field effect transistor device that can be used in wide range of applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Features of the IRFP9240 are:(1)12A, 200V; (2)rDS(ON) = 0.500 ; (3)single pulse avalanche energy rated; (4)SOA is power dissipation limited; (5)nanosecond switching speeds; (6)linear transfer characteristics; (7)high input impedance.

The absolute maximum ratings of the IRFP9240 can be summarized as:(1)Drain to Source Breakdown Voltage: -200 V;(2)Drain to Gate Voltage (RGS = 20 k): -200 V;(3)Continuous Drain Current: -12 A;(4)Pulsed Drain Current: -48 A;(5)Gate to Source Voltage: ±20 V;(6)Maximum Power Dissipation: 150 W;(7)Linear Derating Factor: 1.2 W/;(8)Single Pulse Avalanche Energy Rating: 790 mJ;(9)Operating and Storage Temperature: -55 to 150 ;(10)Maximum Temperature for Soldering Maximum Temperature for Soldering: 300 ;(11)Maximum Temperature for Soldering Package Body for 10s, See Techbrief 334: 260 .

The electrical characteristics of this IRFP9240 can be summarized as:(1)Drain to Source Breakdown Voltage: -200 V;(2)Gate Threshold Voltage: -2.0 to -4.0 V;(3)Zero Gate Voltage Drain Current: 25 or 250 uA;(4)On-State Drain Current: -12 A;(5)Gate to Source Leakage Current: ±100 nA;(6)Drain to Source On Resistance: 0.380 to 0.500 ;(7)Forward Transconductance: 3.8 to 5.7 S;(8)Turn-On Delay Time: 18 to 22 ns. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .