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MFG:IR  Package Cooled:02+  D/C:247  

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Part Number: IRFPS3815

 

MFG: IR

Package Cooled: 02+

D/C: 247

Description: The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to a...


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IRFPS3815 General Description


The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in  a wide variety of applications.

IRFPS3815 Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V
105
A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V
74
IDM Pulsed Drain Current
390
PD @TC = 25°C Power Dissipation
441
W
  Linear Derating Factor
2.9
W/
VGS Gate-to-Source Voltage
± 30
V
EAS Single Pulse Avalanche Energy
1610
mJ
IAR Avalanche Current
58
A
EAR Repetitive Avalanche Energy
38
mJ
dv/dt Peak Diode Recovery dv/dt
3.0
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )

IRFPS3815 Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated

IRFPS3815 datasheet

IRFPS3815
PDF/DataSheet Download

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