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Part Number: IRFPS60N50C

 

 

 

 

 

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IRFPS60N50C Maximum Ratings

 
Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, V GS @ 10V
60
A
ID @ TC = 100°C Continuous Drain Current, V GS @ 10V
38
IDM Pulsed Drain Current
340
PD @TC = 25°C Power Dissipation
390
W
  Linear Derating Factor
3.1
W/°C
VGS Gate-to-Source Voltage
±20
V
EAS Single Pulse Avalanche Energy
600
mJ
IAR Avalanche Current
60
A
EAR Repetitive Avalanche Energy
39
mJ
dv/dt Peak Diode Recovery dv/dt
±20
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55to+150
°C
  Soldering Temperature, for 10 seconds
300
  Recommended clip force
20
 
Parameter
Typ.
Max.
Units
RJC Junction-to-Case
-
0.32
°C/W
RCS Case-to-Sink, Flat, Greased Surface
0.24
-
RJA Junction-to-Ambient
-
40

IRFPS60N50C Typical Application

·Switch Mode Power Supply (SMPS)
·UninterruptIble Power Supply
· High Speed Power Switching

IRFPS60N50C datasheet

IRFPS60N50C
PDF/DataSheet Download

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