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IRFS150A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00163716 Detail

IRFS150A: MOSFET 100V N-Channel A-FET

IRFS150A Data Sheet

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Part Number:
IRFS150A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Continuous Drain Current : 47 A Resistance Drain-Source RDS (on) : 0.04 Ohms
Configuration : Single Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole Package / Case : TO-3PF
Packaging : Tube    

Description

Gate-Source Breakdown Voltage :
Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 47 A
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.04 Ohms


Features:

`Avalanche Rugged Technology
`Rugged Gate Oxide Technology
`Lower Input Capacitance
`Improved Gate Charge
`Extended Safe Operating Area
`175 Operating Temperature
`Lower Leakage Current : 10 A (Max.) @ VDS = 100V
`Lower RDS(ON) : 0.032 (Typ.)


Specifications

</TABL
SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 100 V
ID Continuous Drain Current (TC=25 ) 31 A
Continuous Drain Current (TC=100) 21.9 A
IDM Drain Current-Pulsed 170 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 641 mJ
IAR Avalanche Current 31 A
EAR Repetitive Avalanche Energy 10 mJ
dv/dt Peak Diode Recovery dv/dt 6.5 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 100
0.67		 W
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



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