IRFS240B

Features: `12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V`Low gate charge ( typical 45 nC)`Low Crss ( typical 45 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symbol Parameter IRFP250B Units VDSS Drain-Source Voltage 200 V ID Drain Curr...

product image

IRFS240B Picture
SeekIC No. : 004377403 Detail

IRFS240B: Features: `12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V`Low gate charge ( typical 45 nC)`Low Crss ( typical 45 pF)`Fast switching`100% avalanche tested`Improved dv/dt capabilitySpecifications Symb...

floor Price/Ceiling Price

Part Number:
IRFS240B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

`12.8A, 200V, RDS(on) = 0.18 @VGS = 10 V 
`Low gate charge ( typical  45 nC)
`Low Crss ( typical  45 pF)
`Fast switching
`100% avalanche tested
`Improved dv/dt capability



Specifications

Symbol
Parameter
IRFP250B
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100)
12.8
8.1
A
A
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3)
51.2
±30
250
12.8
7.3
5.5
A
V
mJ
A
mJ
V/ns
W
PD
Power Dissipation (TC= 25)
- Derate above 25
73
0.59
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
 
Parameter
Typ.
Max.
Units
RJC
RJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
-
-
1.7
40
/W



Description

These N-Channel enhancement mode power field effect transistors of the IRFS240B are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology of the IRFS240B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Computers, Office - Components, Accessories
Semiconductor Modules
Static Control, ESD, Clean Room Products
Optical Inspection Equipment
Audio Products
Fans, Thermal Management
View more