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IRFS250B

Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFS250B Units VDSS Drain-Source Voltag...

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IRFS250B: Features: • 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V• Low gate charge ( typical 95 nC)• Low Crss ( typical 75 pF)• Fast switching• 100% avalanche tested• Improved...

IRFS250B Data Sheet

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Part Number:
IRFS250B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 21.3A, 200V, RDS(on) = 0.085 @VGS = 10 V
• Low gate charge ( typical 95 nC)
• Low Crss ( typical 75 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter IRFS250B Units
VDSS Drain-Source Voltage 200 V
ID Drain Current - Continuous (TC = 25)
                      - Continuous (TC = 100)		 21.3 A
13.5 A
IDM Drain Current - Pulsed (Note 1) 85 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 600 mJ
IAR Avalanche Current (Note 1) 21.3 A
EAR Repetitive Avalanche Energy (Note 1) 9.0 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns
PD Power Dissipation (TC = 25)
                          - Derate above 25		 90 W
0.72 W/
TJ, TSTG Operating and Storage Temperature Range -55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds		 300



Description

These N-Channel enhancement mode power field effect transistors of the IRFS250B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of the IRFS250B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.




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