MOSFET N-CH 200V 31A D2PAK
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|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
16 |
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
14 | |
|
IDM |
Pulsed Drain Current Å |
64 | |
|
PD @TA = 25°C |
Power Dissipation á |
140 |
W |
|
PD @TC = 25°C |
Power Dissipation |
0.90 | |
|
Linear Derating Factor |
+30 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
2.7 |
V |
|
TSTG |
Peak Diode Recovery dv/dt É |
-55 to + 175 |
V/ns |
|
Storage Temperature Range | |||
|
TJ |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
°C |
|
TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 | |
|
Mounting torqe, 6-32 or M3 screwÜ |
10 lbf•in (1.1N•m) |
N |
| Technical/Catalog Information | IRFS31N20D |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 31A |
| Rds On (Max) @ Id, Vgs | 82 mOhm @ 18A, 10V |
| Input Capacitance (Ciss) @ Vds | 2370pF @ 25V |
| Power - Max | 3.1W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFS31N20D IRFS31N20D |