Purchase IRFS3207, In-stock IRFS3207 From SeekIC.
MFG:IR Package Cooled:D2-PAK D/C:09+
- Table of contents:
IRFS3207
-
Suppliers
DataSheet
General Description
IRFS3207 Maximum Ratings
|
Symbol |
Parameter |
Max. |
Units |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
180 |
A |
| ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
130 | |
| IDM | Pulsed Drain Current |
720 | |
| PD @TC= 25 | Maximum Power Dissipation |
330 |
W
|
| Linear Derating Factor |
2.2 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| dv/dt | Peak Diode Recovery |
5.8 |
V/ns |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torqe, 6-32 or M3 screw | 10lb in (1.1N m) |
IRFS3207 Typical Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
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