MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 75 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 180 A | ||
| Resistance Drain-Source RDS (on) : | 4.5 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | D2PAK | Packaging : | Tube |
|
Symbol |
Parameter |
Max. |
Unit |
| ID @ TC=25 | Continuous Drain Current, VGS @ 10V |
170 |
A |
| ID @ TC=100 | Continuous Drain Current, VGS @ 10V |
120 | |
| IDM | Pulsed Drain Current |
720 | |
| PD @TC=25 | Maximum Power Dissipation |
300 |
W |
| Linear Derating Factor |
2.0 |
W/ | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| dv/dt | Peak Diode Recovery |
5.8 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw |
10lb`in (1.1N`m) |
| Technical/Catalog Information | IRFS3207PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25° C | 170A |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 7600pF @ 50V |
| Power - Max | 300W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 260nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS3207PBF IRFS3207PBF |