IRFS33N15D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 90nC @ 10V
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Current - Continuous Drain (Id) @ 25° C: 33A
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Rds On (Max) @ Id, Vgs: 56 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds: 2020pF @ 25V


Description

The IRFS33N15D is a monolithic digital IC level meter.

Features of the IRFS33N15D are:(1)High frequency DC-DC converters; (2)Low Gate-to-Drain Charge to Reduce Switching Losses; (3)Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001); (4)Fully Characterized Avalanche Voltage and Current.

The absolute maximum ratings of the IRFS33N15D can be summarized as:(1) Continuous Drain Current, VGS @ 10V: 33A; (2) Continuous Drain Current, VGS @ 10V :24 A; (3)Pulsed Drain Current :130A; (4) Power Dissipation:3.8 W; (5) Power Dissipation :W; (6)Linear Derating Factor: 1.1 W/°C; (7)Gate-to-Source Voltage :± 30 V; (8) Peak Diode Recovery dv/dt :4.4 V/ns; (9)Operating Junction and Storage Temperature Range:-55  to + 175°C; (10)Soldering Temperature, for 10 seconds: 300 (1.6mm from case)°C; (11)Mounting  torqe,  6-32  or M3  screw:10 lbf in (1.1Nm).If you want to know more information such as the electrical AC characteristics of the IRFS33N15D, please download the datasheet in www.seekdatasheet.com .