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IRFS350A

MOSFET 400V N-Channel A-FET

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SeekIC No. : 00161263 Detail

IRFS350A: MOSFET 400V N-Channel A-FET

IRFS350A Data Sheet

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Part Number:
IRFS350A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 11.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Package / Case : TO-3PF
Drain-Source Breakdown Voltage : 400 V


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current: 10A (Max.) @ VDS = 400V
` Low RDS(ON): 0.254W (Typ.)


Specifications

Symbol Parameter Rating Unit
VDSS

 Drain-Source Voltage

 20

 V
ID

IDM		 Continuous Drain Current (Tc=25°C)
Continuous Drain Current (Tc=100°C)

Drain Current-Pulsed (1)		 11.5
7.3

68		 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (2) 1134 mJ
IAR Avalanche Current (1) 11.5 A
EAR Repetitive Avalanche Energy (1) 9.2 mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
PD* Total Power Dissipation (TC=25)

Linear Derating Factor		 92

0.74		 W

W/
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300




Parameters:

Technical/Catalog InformationIRFS350A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs300 mOhm @ 5.75A, 10V
Input Capacitance (Ciss) @ Vds 2780pF @ 25V
Power - Max92W
PackagingTube
Gate Charge (Qg) @ Vgs131nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS350A
IRFS350A



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