Position: Home  > All Categories> Integrated Circuits (ICs) > IRFS350A

IRFS350A

MOSFET 400V N-Channel A-FET

product image

IRFS350A Picture
See larger image
SeekIC No. : 00161263 Detail

IRFS350A: MOSFET 400V N-Channel A-FET

IRFS350A Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFS350A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/26

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 400 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 11.5 A
Resistance Drain-Source RDS (on) : 0.3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 11.5 A
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.3 Ohms
Package / Case : TO-3PF
Drain-Source Breakdown Voltage : 400 V


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` Extended Safe Operating Area
` Lower Leakage Current: 10A (Max.) @ VDS = 400V
` Low RDS(ON): 0.254W (Typ.)


Specifications

Symbol Parameter Rating Unit
VDSS

 Drain-Source Voltage

 20

 V
ID

IDM		 Continuous Drain Current (Tc=25°C)
Continuous Drain Current (Tc=100°C)

Drain Current-Pulsed (1)		 11.5
7.3

68		 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy (2) 1134 mJ
IAR Avalanche Current (1) 11.5 A
EAR Repetitive Avalanche Energy (1) 9.2 mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.0 V/ns
TJ,TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
PD* Total Power Dissipation (TC=25)

Linear Derating Factor		 92

0.74		 W

W/
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds		 300




Parameters:

Technical/Catalog InformationIRFS350A
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25° C11.5A
Rds On (Max) @ Id, Vgs300 mOhm @ 5.75A, 10V
Input Capacitance (Ciss) @ Vds 2780pF @ 25V
Power - Max92W
PackagingTube
Gate Charge (Qg) @ Vgs131nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS350A
IRFS350A



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Resistors
A101G
3006P-1-205LF
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Test Equipment
TOP853
TOP2005
Crystals and Oscillators
WT325BI0030.000000
2SB49
View more