Resistance Drain-Source RDS (on)
:
Configuration
:
Maximum Operating Temperature
:
Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Package / Case
: D2PAK
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 60 V
Continuous Drain Current
: 43 A
Application·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits
Specifications
|
Symbol |
Parameter |
Max. |
Units |
| ID @ TC=25 |
Continuous Drain Current,VGS@ 10V |
43 |
A |
| ID @ TC=100 |
Continuous Drain Current, VGS@ 10V |
31 |
| IDM |
Pulsed Drain Current |
170 |
| PD @ TC = 25 |
Maximum Power Dissipation |
71 |
W |
|
Linear Derating Factor |
0.47 |
W/ |
| VGS |
Gate-to-Source Voltage |
±20 |
V |
| dv/dt |
Peak Diode Recovery |
24 |
V/ns |
|
Operating Junction and
Storage Temperature Range |
-55 to +175 |
|
TJ
TSTG |
Soldering Temperature, for 10 seconds
(1.6mm from case) |
300 |
|
Mounting torque, 6-32 or M3 screw |
10lbin (1.1Nm) |
|
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ= 25, L = 0.23mH
RG= 25Ω, IAS= 25A, VGS =10V. Part not recommended for use above this value.
ISD 25A, di/dt 1580A/µs, VDD V(BR)DSS , TJ 175.
Parameters: | Technical/Catalog Information | IRFS3806PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 43A |
| Rds On (Max) @ Id, Vgs | 15.8 mOhm @ 25A, 10V |
| Input Capacitance (Ciss) @ Vds | 1150pF @ 50V |
| Power - Max | 71W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 30nC @ 10V |
| Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS3806PBF
IRFS3806PBF
|
IRFS3806PBF Data Sheet
