IRFS4229PBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Package / Case : D2PAK
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : 30 V
Continuous Drain Current : 45 A
Resistance Drain-Source RDS (on) : 48 m Ohms


Features:

`Advanced Process Technology
`Key Parameters Optimized for PDP Sustain,  Energy Recovery and Pass Switch Applications
`Low E<sub>PULSE</sub>  Rating to Reduce Power   Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
`Low Q_G for Fast Response
`High Repetitive Peak Current Capability for Reliable Operation
`Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for  Improved Ruggedness
`Repetitive Avalanche Capability for Robustness and Reliability


Specifications

Symbol	Parameter	Max.	Units
VGS	Gate-to-Source Voltage	±30	V
ID @ TA = 25	Continuous Drain Current,VGS @ 10V	45	A
ID @ TA = 70	Continuous Drain Current,VGS @ 10V	32
IDM	Pulsed Drain Current	180
IRP @TC= 25	Repetitive Peak Current	91
PD @TC= 25	Power Dissipation	330	W
PD @TC = 70	Power Dissipation	190	W
	Linear Derating Factor	2.2	W/
TJ, TSTG	Operating Junction and Storage Temperature Range	-40 TO +175
	Soldering Temperature for 10 seconds	300
	Mounting Torque, 6-32 or M3 Screw	10l`bin (1.1Nm)	N

Description

This HEXFET^® Power MOSFET is specifically designed for Sustain;Energy Recovery&Pass switch applications in Plassma Display Panels.This MOSFET IRFS4229PbF utilizes the latest processing tech niques to achieve low on-resistance per silicon are and low E_PULSE rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient.robust and reliable device for PDP driving applications.

Parameters:

Technical/Catalog Information	IRFS4229PBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	45A
Rds On (Max) @ Id, Vgs	48 mOhm @ 26A, 10V
Input Capacitance (Ciss) @ Vds	4560pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFS4229PBF IRFS4229PBF