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MFG:D2-Pak  Package Cooled:7850  D/C:IR  

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Part Number: IRFS4229PbF

 

MFG: D2-Pak

Package Cooled: 7850

D/C: IR

Description: This HEXFET® Power MOSFET is specifically designe...


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IRFS4229PbF General Description


This HEXFET® Power MOSFET is specifically designed for Sustain;Energy Recovery&Pass switch applications in Plassma Display Panels.This MOSFET utilizes the latest processing tech niques to achieve low on-resistance per silicon are and low EPULSE rating.Additional features of this MOSFET are 175 operating junction temperature and high repetitive peak current capability.These features combine to make this MOSFET a highly efficient.robust and reliable device for PDP driving applications.

IRFS4229PbF Maximum Ratings

Symbol
Parameter
Max.
Units
VGS Gate-to-Source Voltage
±30
V
ID @ TA = 25 Continuous Drain Current,VGS @ 10V
45
A
ID @ TA = 70 Continuous Drain Current,VGS @ 10V
32
IDM Pulsed Drain Current
180
IRP @TC= 25 Repetitive Peak Current
91
PD @TC= 25 Power Dissipation
330
W
PD @TC = 70 Power Dissipation
190
W
Linear Derating Factor
2.2
W/
TJ, TSTG Operating Junction and
Storage Temperature Range
-40 TO +175
Soldering Temperature for 10 seconds
300
Mounting Torque, 6-32 or M3 Screw
10l`bin (1.1Nm)
N

IRFS4229PbF Features

`Advanced Process Technology
`Key Parameters Optimized for PDP Sustain,  Energy Recovery and Pass Switch Applications
`Low EPULSE  Rating to Reduce Power   Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
`Low QG for Fast Response
`High Repetitive Peak Current Capability for Reliable Operation
`Short Fall & Rise Times for Fast Switching
`175 Operating Junction Temperature for  Improved Ruggedness
`Repetitive Avalanche Capability for Robustness and Reliability

IRFS4229PbF datasheet

IRF034
PDF/DataSheet Download

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