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MFG:IR

MFG:IR

| Symbol | Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 127 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 90 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 560 | |
| PD @TC = 25°C | Maximum Power Dissipation | 250 | W |
| Linear Derating Factor | 1.7 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery | 18 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10lb in (1.1Nm) |
IRFS4310ZPBF
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