IRFS4610

MOSFET N-CH 100V 73A D2PAK

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SeekIC No. : 003433548 Detail

IRFS4610: MOSFET N-CH 100V 73A D2PAK

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Part Number:
IRFS4610
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 100V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 73A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 100µA Gate Charge (Qg) @ Vgs: 140nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3550pF @ 50V
Power - Max: 190W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) @ Vgs: 140nC @ 10V
Supplier Device Package: D2PAK
Power - Max: 190W
Current - Continuous Drain (Id) @ 25° C: 73A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 4V @ 100µA
Rds On (Max) @ Id, Vgs: 14 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds: 3550pF @ 50V


Application

·High Efficiency Synchronous Rectification in SMPS
·Uninterruptible Power Supply
·High Speed Power Switching
·Hard Switched and High Frequency Circuits



Specifications

Symbol Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
73
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
52
A
IDM Pulsed Drain Current
290
A
PD @TC = 25°C Maximum Power Dissipation
190
W
  Linear Derating Factor
1.3
W/°C
VGS Gate-to-Source Voltage
± 20
V
dV/dt Peak Diode Recovery
7.6
V/ns
TJ
TSTG
Operating Junction and °C
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
(1.6mm from case)
300
°C
  Mounting torque, 6-32 or M3 screw
10lb`in (1.1N`m)



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