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IRFS520A: MOSFET 100V N-Channel A-FET

IRFS520A Data Sheet

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Part Number:: IRFS520A
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/4/27

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	7.2 A
Resistance Drain-Source RDS (on) :	0.2 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220F	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.2 Ohms
Continuous Drain Current : 7.2 A

Features:

Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 Operating Temperature
Lower Leakage Current : 10 A (Max.) @ V_DS = 100V
Lower R_DS(ON) : 0.155 (Typ.)

Specifications

Symbol	Characteristic	Value	Unit
V_DSS	Drain-to-Source Voltage	100	V
I_D	Continuous Drain Current (T_C=25)	7.2	A
I_D	Continuous Drain Current (T_C=100)	5.1	A
I_DM	Drain Current-Pulsed 1	37	A
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulsed Avalanche Energy 2	104	mJ
I_AR	Avalanche Current 1	7.2	A
E_AR	Repetitive Avalanche Energy 1	2.8	mJ
dv/dt	Peak Diode Recovery dv/dt 3	6.5	V/ns
P_D	Total Power Dissipation (T_C=25) Linear Derating Factor	28 0.19	W W/
T_J,T_STG	Operating Junction and Storage Temperature Range	- 55 to +175
T_L	Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds	300

Notes ;
1.Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
2.L=3mH, I_AS=7.2A, V_DD=25V, R_G=27 , Starting T_J =25
3.I_SD 9.2A, di/dt 300A/ s, V_DD BV_DSS , Starting T_J =25

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IRFS520A

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