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IRFS530A

MOSFET 100V N-Channel A-FET

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SeekIC No. : 00160818 Detail

IRFS530A: MOSFET 100V N-Channel A-FET

IRFS530A Data Sheet

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Part Number:
IRFS530A
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 10.7 A
Resistance Drain-Source RDS (on) : 0.11 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220F
Resistance Drain-Source RDS (on) : 0.11 Ohms
Continuous Drain Current : 10.7 A


Features:

· Avalanche Rugged Technology
· Rugged Gate Oxide Technology
· Lower Input Capacitance
· Improved Gate Charge
· Extended Safe Operating Area
· 175 Operating Temperature
· Lower Leakage Current : 10 A (Max.) @ VDS = 100V
· Lower RDS(ON) : 0.092 (Typ.)


Specifications

Symbol
Parameter
Value
Units
VDSS
 Drain-to-Source Voltage
100
V
ID
 Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
10.7
7.6
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
56 
W/
VGS
Gate-to-Source Voltage
0
V
EAS
Single Pulse Avalanche Energy
229
mJ
IAR
Avalanche Current
10.7
A
EAR
Repetitive Avalanche Energy
3.2
mJ
dV/dt
Peak Diode Recovery dv/dt
6.5
V/ns
PD
 Total Power Dissipation (TC=25 )
Linear Derating Factor
32
0.21
W
TJ
Operating Junction
-55 to 200
TSTG
Storage Temperature Range
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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