MOSFET 100V N-Channel A-FET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18 A | ||
| Resistance Drain-Source RDS (on) : | 0.052 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220F | Packaging : | Tube |
| SYMBOL | PARAMETER | VALUE | UNIT |
| VDSS | Drain-Source Voltage | 100 | V |
| ID | Continuous Drain Current (TC=25 ) | 17 | A |
| Continuous Drain Current (TC=100) | 12 | A | |
| IDM | Drain Current-Pulsed | 110 | A |
| VGS | Gate-to-Source Voltage | ±30 | V |
| EAS | Single Pulsed Avalanche Energy | 385 | mJ |
| IAR | Avalanche Current | 17 | A |
| EAR | Repetitive Avalanche Energy | 3.9 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 6.5 | V/ns |
| PD | Total Power Dissipation (TC=25) Linear Derating Factor |
39 0.26 |
W |
| TJ , TSTG | Operating Junction and Storage Temperature Range |
- 55 to +150 | |
| TL | Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |
| Technical/Catalog Information | IRFS540A |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 17A |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 8.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1710pF @ 25V |
| Power - Max | 39W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 78nC @ 10V |
| Package / Case | TO-220F |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFS540A IRFS540A |