IRFS610B

Features:

• 3.3A, 200V, R_DS(on) = 1.5 @V_GS = 10 V
• Low gate charge ( typical 7.2 nC)
• Low Crss ( typical 6.8 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter		IRF610B	IRFS610B	Units
VDSS	Drain-Source Voltage		200		V
ID	Drain Current	- Continuous (TC = 25°C)	3.3	3.3 *	A
		- Continuous (TC = 100°C)	2.1	2.1*	A
IDM	Drain Current - Pulsed (Note 1)		10	10*	A
VGSS	Gate-Source Voltage		± 30		V
EAS	Single Pulsed Avalanche Energy (Note 2)		40		mJ
IAR	Avalanche Current (Note 1)		3.3		A
EAR	Repetitive Avalanche Energy (Note 1)		3.8		mJ
dv/dt	Peak Diode Recovery dv/dt (Note 3)		5.5		V/ns
PD	Power Dissipation (TC = 25°C) - Derate above 25°C		38	22	W
			0.31	0.18	W/°C
TJ, TSTG	Operating and Storage Temperature Range		-55 to +150		°C
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds		300		°C

* Drain current limited by maximum junction temperature.



Description

These N-Channel enhancement mode power field effect transistors of IRFS610B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFS610B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.