Position: Home  > All Categories> Integrated Circuits (ICs) > IRFS624B

IRFS624B

Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRF624B IRFS624B Units VDSS Drai...

product image

IRFS624B Picture
See larger image
SeekIC No. : 004377437 Detail

IRFS624B: Features: • 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V• Low gate charge ( typical 13.5 nC)• Low Crss ( typical 9.5 pF)• Fast switching• 100% avalanche tested• Improved...

IRFS624B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRFS624B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 4.1A, 250V, RDS(on) = 1.1 @VGS = 10 V
• Low gate charge ( typical 13.5 nC)
• Low Crss ( typical 9.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol Parameter
IRF624B
IRFS624B
Units
VDSS Drain-Source Voltage
250
V
ID Drain Current
- Continuous (TC = 25mJ)
- Continuous (TC = 100mJ)
4.1
4.1*
A
2.6
2.6*
A
IDM Drain Current
- Pulsed                                           (Note 1)
16.4
16.4*
A
VGSS Gate-Source Voltage
± 30
V
EAS Single Pulsed Avalanche Energy     (Note 2)
75
mJ
IAR Avalanche Current                         (Note 1)
4.1
A
EAR Repetitive Avalanche Energy         (Note 1)
4.9
mJ
dv/dt Peak Diode Recovery dv/dt           (Note 3)
5.5
V/ns
PD Power Dissipation (TC = 25mJ)
- Derate above 25mJ
49
34
W
0.39
0.27
W/
TJ,TSTG Operating and Storage Temperature Range
-55 to +150
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
* Drain current limited by maximum junction temperature


Description

These N-Channel enhancement mode power field effect transistors of IRFS624B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology of IRFS624B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Resistors
A101G
3006P-1-205LF
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Test Equipment
TOP853
TOP2005
Memory Cards, Modules
WT32
VTL5C7
View more