Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 200VLow RDS(ON) : 0.333 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-to-Source V...
IRFS630A: Features: Avalanche Rugged TechnologyRugged Gate Oxide TechnologyLower Input CapacitanceImproved Gate ChargeExtended Safe Operating AreaLower Leakage Current : 10 A (Max.) @ VDS = 200VLow RDS(ON) : ...
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Symbol |
Parameter |
Value |
Units |
VDSS |
Drain-to-Source Voltage |
200 |
V |
ID |
Continuous Drain Current (TC=25 ) Continuous Drain Current (TC=100 ) |
6.5 4.1 |
A |
IDM |
Drain Current-Pulsed Gate-to-Source Voltage |
36 |
W/ |
VGS |
Gate-to-Source Voltage |
30 |
V |
EAS |
Single Pulse Avalanche Energy |
141 |
mJ |
IAR |
Avalanche Current |
6.5 |
A |
EAR |
Repetitive Avalanche Energy |
3.8 |
mJ |
dV/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
PD |
Total Power Dissipation (TC=25 ) Linear Derating Factor |
38 0.3 |
W |
TJ |
Operating Junction |
-55 to 150 |
|
TSTG |
Storage Temperature Range | ||
TL |
Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds |
300 |