IRFS634B

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 8.1 A
Resistance Drain-Source RDS (on) : 0.45 Ohms


Features:

• 8.1A, 250V, R_DS(on) = 0.45 @V_GS = 10 V
• Low gate charge ( typical 29 nC)
• Low Crss ( typical 20 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability


Specifications

Symbol	Parameter	IRF634B	IRFS634B	Units
VDSS	Drain-Source Voltage	250		V
ID	Drain Current - Continuous (TC = 25 ) -Continuous (TC = 100 )	8.1	8.1*	A
		5.1	5.1*	A
IDM	Drain Current-Pulsed                   (Note 1)	32.4	32.4*	A
VGSS	Gate-Source Voltage	±30		V
EAS	Single Pulsed Avalanche Energy  (Note 2)	200		mJ
IAR	Avalanche Current                      (Note 1)	8.1		A
EAR	Repetitive Avalanche Energy       (Note 1)	7.4		mJ
dv/dt	Peak Diode Recovery dv/dt        (Note 3)	5.5		V/ns
PD	Power Dissipation (TC=25 ) - Derate above 25°C	74	38	W
		0.59	0.3	W/
TJ,TSTG	Operating and Storage Temperature Range	- 55 to +150
TL	Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	300

* Drain current limited by maximum junction temperature.


Description

These N-Channel enhancement mode power field effect transistors IRFS634B are produced using Fairchild's proprietary, planar, DMOS technology.

This advanced technology IRFS634B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.