Package Cooled:TO-220 D/C:09+
Package Cooled: TO-220
D/C: 09+
Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies.
| Symbol | Parameter | IRF644B | IRFS644B | Units |
| VDSS | Drain to Source Voltage | 250 | V | |
| ID | Continuous Drain Current(@TC = 25°C) | 14 | 14* | A |
| Continuous Drain Current(@TC = 100°C) | 8.9 | 8.9* | A | |
| IDM | Drain Current Pulsed (Note 1) | 56 | 56* | A |
| VGSS | Gate-Source Voltage | ± 30 | V | |
| EAS | Single Pulsed Avalanche Energy (Note 2) | 480 | mJ | |
| IAR | Avalanche Current (Note 1) | 14 | A | |
| EAR | Repetitive Avalanche Energy (Note 1) | 13.9 | mJ | |
| dv/dt | Peak Diode Recovery dv/dt (Note 3) | 5.5 | V/ns | |
| PD | Power Dissipation(@TC = 25 °C) | 139 | 43 | W |
| - Derate above 25°C | 1.11 | 0.35 | W/ | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 to +150 | ||
| TL | Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds |
300 | ||
IRF034
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