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IRFS644BYDTU_AS001

MOSFET N-Ch, 250V, 7.9A 0.28Ohm

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SeekIC No. : 00159811 Detail

IRFS644BYDTU_AS001: MOSFET N-Ch, 250V, 7.9A 0.28Ohm

IRFS644BYDTU_AS001 Data Sheet

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Part Number:
IRFS644BYDTU_AS001
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.28 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.28 Ohms


Parameters:

Technical/Catalog InformationIRFS644BYDTU_AS001
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs280 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 25V
Power - Max43W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220F
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFS644BYDTU_AS001
IRFS644BYDTU_AS001



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