IRFS730A

Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 400V·Lower RDS(ON) : 0.765 (Typ.)Specifications Symbol Parameter Value Units VDSS Drain-to...

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SeekIC No. : 004377448 Detail

IRFS730A: Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 400V·Lower R...

floor Price/Ceiling Price

Part Number:
IRFS730A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current : 10 A (Max.) @ VDS = 400V
·Lower RDS(ON) : 0.765 (Typ.)



Specifications

Symbol
Parameter
Value
Units
VDSS
Drain-to-Source Voltage
400
V
ID
Continuous Drain Current (TC=25 )
Continuous Drain Current (TC=100 )
3.9
2.5
A
IDM
Drain Current-Pulsed
Gate-to-Source Voltage
22
W/
VGS
Gate-to-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
348
mJ
IAR
Avalanche Current
3.9
A
EAR
Repetitive Avalanche Energy
3.8
mJ
dV/dt
Peak Diode Recovery dv/dt
4.0
V/ns
PD
Total Power Dissipation (TC=25 )
Linear Derating Factor
38
0.3
W
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds
300



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