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IRFS830A

Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 500V·Lower RDS(ON) : 1.169 (Typ.)Specifications SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltag...

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SeekIC No. : 004377451 Detail

IRFS830A: Features: ·Avalanche Rugged Technology·Rugged Gate Oxide Technology·Lower Input Capacitance·Improved Gate Charge·Extended Safe Operating Area·Lower Leakage Current : 10 A (Max.) @ VDS = 500V·Lower R...

IRFS830A Data Sheet

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Part Number:
IRFS830A
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Avalanche Rugged Technology
·Rugged Gate Oxide Technology
·Lower Input Capacitance
·Improved Gate Charge
·Extended Safe Operating Area
·Lower Leakage Current : 10 A (Max.) @ VDS = 500V
·Lower RDS(ON) : 1.169 (Typ.)


Specifications

SYMBOL PARAMETER VALUE UNIT
VDSS Drain-Source Voltage 200 V
ID Continuous Drain Current (TC=25 ) 3.1 A
Continuous Drain Current (TC=100) 2 A
IDM Drain Current-Pulsed 18 A
VGS Gate-to-Source Voltage ±30 V
EAS Single Pulsed Avalanche Energy 374 mJ
IAR Avalanche Current 3.1 A
EAR Repetitive Avalanche Energy 3.8 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
PD Total Power Dissipation (TC=25)
Linear Derating Factor		 38
0.3		 W
TJ , TSTG Operating Junction and
Storage Temperature Range		 - 55 to +150
TL Maximum Lead Temp. for Soldering
Purposes, 1/8 " from case for 5-seconds		 300



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