IRFSL11N50APBF

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.55 Ohms
Continuous Drain Current : 11 A
Package / Case : TO-262


Features:






Specifications






Description

      The IRFSL11N50APbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
      The IRFSL11N50APbF has six features.The first one is that it would have dynamic dv/dt rating.The second one is that it would be repetitive avalanche rated.The third one is that it would have fast switching.The fourth one is that it would have ease of paralleling.The next one is that it would have simple drive requirements.The last one is that it would be lead free.That are all the features.
      Some absolute maximum ratings of IRFSL11N50APbF have been concluded into several points as follow.The first one is about its continuous drain current, Vgs @ 10V, Tc=25°C which would be 11A.The second one is about its continuous drain current, Vgs @ 10V, Tc=100°C which would be 7.0A.The third one is about its pulse drain current which would be 44A.The fourth one is about its power dissipation which would be 190W.The fifth one is about its linear derating factor which would be 1.3W/°C.The sixth one is about its gate-to source voltage which would be +/-30V.The seventh one is about its signal pulse avalanche energy which would be 390mJ.The eighth one is about its avalabche current which would be 11A.The ninth one is about its repetitive avalanche energy which would be 19mJ.The next one is about its peak diode recovery dv/dt which would be 4.1 V/ns.The next one is about its operating junction and storage temperature range which would be from -55 to +175°C.The next one is about its soldering temperature, for 10 sec which would be 300°C.
      And also there are some electrical characteristics @ Tj=25°C (unless otherwise specified) about IRFSL11N50APbF.The first one is about its drain to source breakdown voltage which would be min 500V with condition of Vgs=0V, Id=250uA.The second one is about its breakdown voltage temp. coefficient which would be typ 0.57V/°C.The third one is about its static drain to source on resistance which would be max 0.55 with condition of Vgs=10V, Id=6.6A.And so on.For more information please contact us.