FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Gate Charge (Qg) @ Vgs: 50nC @ 10V
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1100pF @ 25V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 170 mOhm @ 9.8A, 10V
ApplicationHigh frequency DC-DC convertersSpecifications
|
|
Parameter |
Max. |
Units |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
16
|
A |
|
ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
14 |
|
IDM |
Pulsed Drain Current Å |
64 |
|
PD @TA = 25°C |
Power Dissipation á |
140 |
W |
|
PD @TC = 25°C |
Power Dissipation |
0.90 |
|
|
Linear Derating Factor |
+30 |
W/°C |
|
VGS |
Gate-to-Source Voltage |
2.7 |
V |
|
TSTG |
Peak Diode Recovery dv/dt É |
-55 to + 175 |
V/ns |
|
Storage Temperature Range |
|
TJ |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
°C |
|
TSTG
|
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
|
|
Mounting torqe, 6-32 or M3 screwÜ |
10 lbf•in (1.1N•m) |
N |
IRFSL17N20D Data Sheet
