IRFSL3207

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 75V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) @ Vgs: 260nC @ 10V
Power - Max: 330W
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds: 7600pF @ 50V
Current - Continuous Drain (Id) @ 25° C: 180A


Application

High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits


Specifications

Symbol	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	180	A
ID @ TC =100	Continuous Drain Current, VGS @ 10V	130
IDM	Pulsed Drain Current	720
PD @TC= 25	Maximum Power Dissipation	330	W
	Linear Derating Factor	2.2	W/
VGS	Gate-to-Source Voltage	± 20	V
dv/dt	Peak Diode Recovery	5.8	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds (1.6mm from case)	300
	Mounting torqe, 6-32 or M3 screw	10lb in (1.1N m)