IRFSL41N15D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 110nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 41A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 2520pF @ 25V


Application

· High frequency DC-DC converters




Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	41	A
ID@ TC = 100	Continuous Drain Current, VGS @ 10V	29
IDM	Pulsed Drain Current	164
PD @TA = 25	Power Dissipation, D2Pak	3.1	W
PD @TC = 25	Power Dissipation, TO-220	200
PD @TC = 25	Power Dissipation, Fullpak	48
	Linear Derating Factor, TO-220	1.3	W/
	Linear Derating Factor, Fullpak	0.32
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	2.7	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 screw	1.1(10)	N•m (lbf•in)