MOSFET MOSFT 100V 127A 6mOhm 120nC
IRFSL4310ZPBF: MOSFET MOSFT 100V 127A 6mOhm 120nC
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 127 A |
| Mounting Style : | Through Hole | Package / Case : | TO-262 |
| Packaging : | Tube |
| Symbol | Parameter | Max. | Units |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 127 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 90 | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V (Package Limited) | 75 | |
| IDM | Pulsed Drain Current | 560 | |
| PD @TC = 25°C | Maximum Power Dissipation | 250 | W |
| Linear Derating Factor | 1.7 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| dv/dt | Peak Diode Recovery | 18 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | °C |
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw | 10lb in (1.1Nm) |
| Technical/Catalog Information | IRFSL4310ZPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 75A, 10V |
| Input Capacitance (Ciss) @ Vds | 6860pF @ 50V |
| Power - Max | 250W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-262 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFSL4310ZPBF IRFSL4310ZPBF |