MOSFET MOSFT 100V 96A 10mOhm 120nC
IRFSL4410PBF: MOSFET MOSFT 100V 96A 10mOhm 120nC
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 96 A |
| Mounting Style : | Through Hole | Package / Case : | TO-262 |
| Packaging : | Tube |
|
Symbol |
Parameter |
Max. |
Units |
| ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
88 |
A |
| ID @ TC =100 | Continuous Drain Current, VGS @ 10V |
63 | |
| IDM | Pulsed Drain Current |
380 | |
| PD @TC= 25 | Maximum Power Dissipation |
200 |
W |
| VGS | Linear Derating Factor |
1.3 | |
| VGS | Gate-to-Source Voltage |
± 20 |
|
| dv/dt | Diode Recovery |
19 |
W/ |
|
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
| Soldering Temperature, for 10 seconds (1.6mm from case) |
300 | ||
| Mounting torque, 6-32 or M3 screw |
10lb`in (1.1N` m) |
| Technical/Catalog Information | IRFSL4410PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 88A |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 58A, 10V |
| Input Capacitance (Ciss) @ Vds | 5150pF @ 50V |
| Power - Max | 200W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V |
| Package / Case | TO-262 |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFSL4410PBF IRFSL4410PBF |