IRFSL59N10D

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 59A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Gate Charge (Qg) @ Vgs: 114nC @ 10V
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
Input Capacitance (Ciss) @ Vds: 2450pF @ 25V


Application

High frequency DC-DC converters 


Specifications

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	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	49	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	52
IDM	Pulsed Drain Current	236
PD @TA = 25°C	Power Dissipation	3.8	W
PD @TC = 25°C	Power Dissipation	200
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	3.3	V/ns
TJ	Operating Junction and	-55 to + 175	°C
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torqe, 6-32 or M3 screw	10 lbf•in (1.1N•m)