IRFU1010ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Drain-Source Breakdown Voltage : 55 V
Package / Case : IPAK
Continuous Drain Current : 91 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free



Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS@ 10V (Silicon Limited)	91	A
ID @ TC = 100	Continuous Drain Current, VGS@10V	65
ID @ TC = 25	Continuous Drain Current VGS@ 10V (Package Limited)	42
IDM	Pulsed Drain Current	360
PD @ TC = 25	Power Dissipation	140	W
	Linear Derating Factor	0.9	W/
VGS	Gate-to-Source Voltage	±20	V
EAS (Thermally limited)	Single Pulse Avalanche Energy	110	mJ
EAS (Tested)	Single Pulse Avalanche Energy Tested Value	220
IAR	Avalanche Current	See Fig.12a,12b,15,16	A
EAR	Repetitive Avalanche Energy		mJ
TJ TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)
	Mounting Torque, 6-32 or M3 screw	10 lbfin (1.1Nm)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRFU1010ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features of IRFU1010ZPbF combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFU1010ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 42A, 10V
Input Capacitance (Ciss) @ Vds	2840pF @ 25V
Power - Max	140W
Packaging	Tube
Gate Charge (Qg) @ Vgs	95nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU1010ZPBF IRFU1010ZPBF