IRFU220N

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 5A
Vgs(th) (Max) @ Id: 4V @ 250µA
Input Capacitance (Ciss) @ Vds: 300pF @ 25V
Drain to Source Voltage (Vdss): 200V
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 23nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 43W
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 600 mOhm @ 2.9A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Application

· High frequency DC-DC converters


Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	5.0	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	3.5
IDM	Pulsed Drain Current	20
PD @TC = 25°C	Power Dissipation	43	W
	Linear Derating Factor	0.71	W/°C
VGS	Gate-to-Source Voltage	±20	V
dv/dt	Peak Diode Recovery dv/dt	7.5	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)