IRFU3410

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Power - Max: 3W
Drain to Source Voltage (Vdss): 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Gate Charge (Qg) @ Vgs: 56nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 31A
Manufacturer: International Rectifier
Input Capacitance (Ciss) @ Vds: 1690pF @ 25V
Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak


Application

·High frequency DC-DC converters




Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	100	V
VGS	Gate-to-Source Voltage	±20
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	31	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	22
IDM	Pulsed Drain Current	125
PD @TC = 25°C	Maximum Power Dissipation	110	W
PD @TA= 25°C	Maximum Power Dissipation	3.0
	Linear Derating Factor	0.71	mW/°C
dv/dt	Peak Diode Recovery dv/dt	15	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case)

Parameters:

Technical/Catalog Information	IRFU3410
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	31A
Rds On (Max) @ Id, Vgs	39 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds	1690pF @ 25V
Power - Max	3W
Packaging	Tube
Gate Charge (Qg) @ Vgs	56nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFU3410 IRFU3410