MOSFET MOSFT 100V 31A 39mOhm 37nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 31 A |
Mounting Style : | Through Hole | Package / Case : | IPAK |
Packaging : | Tube |
Symbol | Parameter |
Max. |
Units |
VDS | Drain-Source Voltage |
100 |
V
|
VGS | Gate-to-Source Voltage |
±20 | |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V |
31 |
A |
ID @ TC= 100 | Continuous Drain Current, VGS @ 10V |
22 | |
IDM | Pulsed Drain Current |
125 | |
PD @TC = 25 | Maximum Power Dissipation |
110 |
W |
PD @TA = 25 | Maximum Power Dissipation |
3.0 | |
Linear Derating Factor |
0.71 |
mW/ | |
dv/dt | Peak Diode Recovery dv/dt |
15 |
V/ns |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 150 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
Technical/Catalog Information | IRFU3410PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 31A |
Rds On (Max) @ Id, Vgs | 39 mOhm @ 18A, 10V |
Input Capacitance (Ciss) @ Vds | 1690pF @ 25V |
Power - Max | 3W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 56nC @ 10V |
Package / Case | IPak, TO-251, DPak, VPak (3 straight leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRFU3410PBF IRFU3410PBF |