IRFU3418PBF

MOSFET N-CH 80V 70A I-PAK

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SeekIC No. : 003433255 Detail

IRFU3418PBF: MOSFET N-CH 80V 70A I-PAK

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Part Number:
IRFU3418PBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/29

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 80V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 70A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) @ Vgs: 94nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3510pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB Supplier Device Package: I-Pak    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Drain to Source Voltage (Vdss): 80V
Packaging: Tube
Mounting Type: Through Hole
Current - Continuous Drain (Id) @ 25° C: 70A
Manufacturer: International Rectifier
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Power - Max: 3.8W
Package / Case: TO-251-3 Long Leads, IPak, TO-251AB
Supplier Device Package: I-Pak
Gate Charge (Qg) @ Vgs: 94nC @ 10V
Rds On (Max) @ Id, Vgs: 14 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds: 3510pF @ 25V


Features:

· Low Gate-to-Drain Charge to Reduce Switching Losses
· Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
· Fully Characterized Avalanche Voltage and Current



Application

· High frequency DC-DC converters
· Lead-Free



Specifications

  Parameter Max. Units
VDS Drain-to-Source Voltage
80
V
ID @ TC = 25

ID @ TC = 100

IDM
Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current
70

50

280
A
PD @ TC = 25

PD @ TA = 25

Maximum Power Dissipation

Maximum Power Dissipation
140

3.8

W
  Linear Derating Factor 0.95 W/
VGS

Gate-to-Source Voltage
± 20

V

dv/dt

Peak Diode Recovery dv/dt 5.2 V/ns
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )  
TJ

TSTG
Operating Junction and

Storage Temperature Range
-55 to +150




Parameters:

Technical/Catalog InformationIRFU3418PBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C70A
Rds On (Max) @ Id, Vgs14 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 3510pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs94nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRFU3418PBF
IRFU3418PBF



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