IRFU3504ZPBF

Resistance Drain-Source RDS (on) :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : N-Channel
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Gate-Source Breakdown Voltage : 20 V
Package / Case : IPAK
Continuous Drain Current : 77 A


Features:

` Advanced Process Technology
` Ultra Low On-Resistance
` 175 Operating Temperature
` Fast Switching
` Repetitive Avalanche Allowed up to Tjmax
` Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current VGS@ 10V(Silicon Limited)	77	A
ID @ TC =100	Continuous Drain Current VGS@ 10V	54
ID @ TC = 25	Continuous Drain Current, VGS@ 10V (Package Limited)	42
IDM	Pulsed Drain Current	310
PD @ TC = 25	Max. Power Dissipation	90	W
	Linear Derating actor	0.6	W/
VGS	Gate-to-Source Voltage	±20	V
EAS(Thermally limited)	Single Pulse Avalanche Energy	77	mJ
EAS (Tested )	Single Pulse Avalanche Energy Tested Value	110	mJ
IAR	Avalanche Current	See Fig.12a, 12b, 15, 16	A
EAR	Repetitive Avalanche Energy		mJ
TJ	Operating Junction	-55 to 175
TSTG	Storage Temperature Range
	Soldering Temperature, for 10 seconds	300(1.6mm from case )
	Mounting Torque, 6-32 or M3 screw	10lb`in (1.1N`m)

Description

Specifically designed for Automotive applications, this HEXFET^® Power MOSFET IRFU3504ZPbF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of the IRFU3504ZPbF are a 175 junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Parameters:

Technical/Catalog Information	IRFU3504ZPBF
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	42A
Rds On (Max) @ Id, Vgs	9 mOhm @ 42A, 10V
Input Capacitance (Ciss) @ Vds	1510pF @ 25V
Power - Max	90W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	45nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRFU3504ZPBF IRFU3504ZPBF