MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC Qg
IRFU3704ZPBF: MOSFET MOSFT 20V 60A 8.4mOhm 9.3nC Qg
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 60 A | ||
Resistance Drain-Source RDS (on) : | 11.4 mOhms | Mounting Style : | Through Hole | ||
Package / Case : | IPAK | Packaging : | Tube |
Parameter |
Max. |
Units | |
VDS | Drain-to-Source Voltage |
20 |
V |
VGS | Gate-to-Source Voltage |
±20 | |
PD @ TC = 25 | Continuous Drain Current, VGS @ 10V |
60 |
A |
PD @ TC = 100 | Continuous Drain Current, VGS @ 10V |
42 | |
IDM | Pulsed Drain Current |
240 | |
PD @ TC = 25 | Maximum Power Dissipation |
48 |
W |
PD @ TC = 100 | Maximum Power Dissipation |
24 | |
Linear Derating Factor |
0.32 |
W/ | |
TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6mm from case) |
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400s; duty cycle 2%.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A.